The diffusion of B under pure N, pure NH3, or their mixtures, was investigated in order to determine the effect of the oxynitridation reaction upon diffusivity. An oxynitridation-enhanced diffusivity was explained in terms of a dual mechanism which involved both vacancy and interstitial Si atoms. With a thin SiO2 layer on the Si wafer, and with a low B concentration, the diffusion data could be described by:

D(cm2/s) = 0.105 exp [-3.22(eV)/kT] + (1.0 x 10-6)exp[-1.71(eV)/kT]p

where p was the partial pressure of NH3.

Oxynitridation-Enhanced Diffusion of Boron in `100' Silicon. N.K.Chen, C.Lee: Journal of the Electrochemical Society, 1993, 140[8], 2390-4