It was found that the Bi diffusivity at between 1220 and 1380C could be described by:

D(cm2/s) = 1.03 x 103exp[-4.64(eV)/kT]

Diffusion of Donor and Acceptor Elements in Silicon. C.S.Fuller, J.A.Ditzenberger: Journal of Applied Physics, 1956, 27, 544