Using the spreading resistance technique, a study was made of diffusion into (111) samples from doped epitaxial source layers deposited in a flowing H2 atmosphere. Under intrinsic conditions, the dopant profiles exhibited excellent Fickian behavior. It was found that, between 1190 and 1394C, the data could be described by:

D(cm2/s) = 1.08 x 100exp[-3.85(eV)/kT]

The results were consistent with a point defect mechanism involving a closely eoupled vacancy-impurity ensemble.

Donor Diffusion Dynamics in Silicon. R.N.Ghoshtagore: Physical Review B, 1971, 3[2], 397-403