The Bi was diffused in from a spin-on source, and the specimens were annealed at temperatures of between 1050 and 1200C. The resultant Bi profiles were measured by using sheet resistivity and etching techniques. The profiles could be described by the complementary error function, and the diffusivity within the above temperature range could be described by the expression:

D(cm2/s) = 2 x 10-4exp[-2.50(eV)/kT]

The Diffusion of Bismuth in Silicon. Y.Ishikawa, K.Yazaki, I.Nakamichi: Japanese Journal of Applied Physics, 1989, 28[7], 1272-3