Radiotracer and serial sectioning techniques were used to study the diffusion of Co in p-type B-doped wafers (table 33). The results could be described by:
D(cm2/s) = 9.2 x 104exp[-2.8(eV)/kT]
Diffusion Coefficient of Cobalt in Silicon. H.Kitagawa, K.Hashimoto: Japanese Journal of Applied Physics, 1977, 16[1], 173-4
Table 33
Diffusion of 57Co
Temperature (C) | D (cm2/s) |
1200 | 1.7 x 10-5 |
1100 | 6.0 x 10-6 |
1000 | 5.4 x 10-7 |
900 | 7.5 x 10-8 |