The introduction of Co from an infinitely thin source into a Si single crystal was investigated at 700 to 1000C. Radioactive tracer and secondary ion mass spectroscopic techniques were used independently in order to determine the diffusion profiles. It was found that the results could be described by an Arrhenius expression in which the pre-exponential factor was between 6.8 x 10-10 and 1.35 x 10-9cm2/s and the activation energy was 1.5eV. The values given by the expression were several orders of magnitude lower than those previously reported when using thick films as the diffusion source in anneals which were carried out at higher temperatures.

A.Appelbaum, D.L.Malm, S.P.Murarka: Journal of Vacuum Science and Technology B, 1987, 5[4], 858-64