The migration of Cr was studied using radiochemical and electrical methods. At a diffusion temperature of 1250C, the dopant profile could be approximated by an error function. By assuming that the error function relationship also held at lower temperatures, the diffusivity at between 1100 and 1250C was determined using the p-n junction method and was found to be described by:

D(cm2/s) = 1 x 10-2exp[-1.0(eV)/kT]

Diffusion and Solid Solubility of Chromium in Silicon. W.Wuerker, K.Roy, J.Hesse: Materials Research Bulletin, 1974, 9[7], 971-7