A combination of rapid thermal annealing and deep-level transient spectroscopy was used to measure Cr profiles in the near-surface region of Czochralski material after a conventional 3-step gettering cycle. By fitting an erfc curve to the results, it was estimated that the Cr diffusivity at 850C was equal to 1.5 x 10-7cm2/s.

Rapid Thermal Annealing: an Efficient Means to Reveal Chromium Profiles in Si after Diffusion and Gettering. J.Zhu, G.Chaussemy, D.Barbier: Applied Physics Letters, 1989, 54[7], 611-3