The diffusion parameters of Cu were determined in profiled Cu samples, that had been prepared by using the Stepanov method, at temperatures ranging from 900 to 1050C. It was found that the data (table 36) could be described by:

D(cm2/s) = 1.5 x 10-2exp[-0.86(eV)/kT]

K.P.Abdurakhmanov, M.B.Zaks, V.V.Kasatkin, G.S.Kulikov, S.K.Persheev, K.K.Khodzhaev: Fizika i Tekhnika Poluprovodnikov, 1989, 23[10], 1891-3 (Soviet Physics - Semiconductors, 1989, 23[10], 1170-1)

Table 36

Diffusion of Cu in Si