Transient ion drift in depletion regions of a Schottky barrier was used to investigate diffusion in B- or Al-doped material (table 38). It was shown that, within the studied temperature range, Cu-B pairing was negligible. Excellent agreement with published diffusivity data was found for Cu ions, as described by the expression:

D (cm2/s) = 4.5 x 10-3exp[-0.39(eV)/kT]

Investigation of Fast Diffusing Impurities in Silicon by a Transient Ion Drift Method. A.Zamouche, T.Heiser, A.Mesli: Applied Physics Letters, 1995, 66[5], 631-3