A study was made of the electrical properties of n- and p-type material with a dislocation density of about 104/cm2 and an O content of 1016/cm3. The Fe-Si solid solution was not stable and the electrical properties of the Fe-doped material varied even at room temperature. From the solid solution decomposition data, it was deduced that Fe diffusion between 100 and 500C could be described by:

D(cm2/s) = 6.3 x 10-4exp[-0.58(eV)/kT]

B.I.Boltaks, M.K.Bakhadyrkhanov, G.S.Kulikov: Fizika Tverdogo Tela, 1971, 13[9], 2675-8