The migration of Fe during low-temperature annealing was studied by using photocapacitance techniques. The effect of an electric field upon the underlying defect reactions was also investigated. The resultant depth profiles revealed the occurrence of Fei out-diffusion, but no precipitation in the bulk, at temperatures of up to 470K. The kinetics in the presence of an electric field were explained in terms of carrier emission-limited Fe drift. The Fei diffusion data at zero field were described by:

D(cm2/s) = 1 x 10-1exp[-0.84(eV)/kT]

The data for a field of -10V were described by:

D(cm2/s) = 1.4 x 10-3exp[-0.69(eV)/kT]

It was concluded that the out-diffusion and drift data reflected the operation of a charge-state dependent diffusion mechanism.

Charge-State-Dependent Diffusion and Carrier-Emission-Limited Drift of Iron in Silicon. T.Heiser, A.Mesli: Physical Review Letters, 1992, 68[7], 978-81