The pairing reaction of interstitial Fe and substitutional B atoms, in Fe-diffused B-doped p-type material, was studied by using deep-level transient spectroscopy. Measurements were made as a function of storage time at temperatures of 0, 27, 42, 57 and 72C (table 40). The diffusivity of Fe at temperatures of between 0 and 72C was found to be described by the expression:

D(cm2/s) = 3.3 x 10-1exp[-0.81(eV)/kT]

Diffusion Coefficient of Iron in Silicon at Room Temperature. H.Nakashima, T.Isobe, Y.Yamamoto, K.Hashimoto: Japanese Journal of Applied Physics, 1988, 27[8], 1542-3

 

Table 41

Diffusion of Fe in Si

 

Temperature (C)

D (cm2/s)

800

8.0 x 10-7

900

1.7 x 10-6

1000

3.0 x 10-6

 

Table 42

Diffusion of Fe in Si

 

Species

Temperature (C)

D (cm2/s)

Feo

130

4.08 x 10-11

Feo

122

3.16 x 10-11

Feo

108

2.02 x 10-11

Feo

100

1.07 x 10-11

Feo

90

8.28 x 10-12

Fe+

130

3.16 x 10-12

Fe+

122

2.30 x 10-12

Fe+

108

1.00 x 10-12

Fe+

100

4.90 x 10-13

Fe+

90

2.78 x 10-13