Using the spreading resistance technique to determine the impurity concentration profiles, an investigation was made of diffusion into (111) samples from doped epitaxial source layers deposited in flowing H2. It was found that the acceptor exhibited a significantly lower mobility when freed from surface effects. An analysis of the diffusion data indicated a similar point defeat mechanism for both group-III and group-V dopants. At between 1143 and 1393C, the results could be described by:

D(cm2/s) = 3.74 x 10-1exp[-3.39(eV)/kT]

Dopant Diffusion in Silicon. III. Acceptors. R.N.Ghoshtagore: Physical Review B, 1971, 3[8], 2507-14