Tracer studies indicated that the diffusion of Ge at between 1100 and 1265C, and for Ge concentrations below the level at which new dislocations were introduced, was given by:

D(cm2/s) = 6.2 x 104exp[-5.17(eV)/kT]

P.V.Pavlov, V.I.Pashkov, E.V.Dobrokhotov: Fizika Tverdogo Tela, 1973, 15[11], 3396-8