The migration of Ge as a lattice impurity in Si was studied using specimens annealed at between 1149 and 166lK. Some 89 concentration profiles were evaluated by means of secondary ion mass spectrometry. The diffusion coefficients were found to range from 2.0 x 10-19 to 7.7 x 10-12cm2/s and, overall, the data could be described by:

D(cm2/s) = 1.03 x 105exp[-5.33(eV)/kT]

The results contradicted the view that a transition from an interstitial mechanism at high temperatures to a vacancy mechanism at low temperatures took place.

P.Dorner, W.Gust, B.Predel, U.Roll, A.Lodding, H.Odelius: Philosophical Magazine A, 1984, 49[4], 557-71

Table 45

Diffusion in Si/Ge Films