The diffusion of Ge impurity in B-doped (about 1016 or 1018/cm3) material was investigated at temperatures of between 1000 and 1200C by using radiotracer and sectioning techniques. At low doping levels, it was found that:

D(cm2/s) = 1.38 x 105exp[-5.39(eV)/kT]

The doping effect led to an enhancement of Ge diffusion. The results were analyzed by assuming that the mechanism involved singly charged and neutral vacancies. Below 1050C, diffusion coefficients which were higher than expected were measured in both slightly and heavily doped material.

A.L.Bouchetout, N.Tabet, C.Monty: Materials Science Forum, 1986, 10-12, 127-32