It was pointed out that quantitative surface diffusion coefficients for clustering systems were of great importance for thin film growth applications. Here, the first determinations of the activation energy for surface diffusion on Stranski-Krastanov layers in a technologically important hetero-system were reported. The findings were based upon previously published independent measurements of the activation energy for cluster growth and for cluster formation from a free adatom concentration. For a Stranski-Krastanov layer of Ge on Si(100), an equivalent coverage of 3.08 monolayers was deduced, together with an activation energy (for surface diffusion) of 0.84eV.

Surface Diffusion Coefficients on Stranski-Krastanov Layers. M.Zinke-Allmang, S.Stoyanov: Japanese Journal of Applied Physics, 1990, 29[10], L1884-7

Table 47

Surface Diffusion Parameters for Ge on Si

(under 65eV Ar+ ion bombardment, 60º off-normal)