Secondary ion mass spectroscopy was used to investigate the diffusion of D in samples of hydrogenated amorphous material. In the case of a film deposited in a direct-current discharge in SiH4, at a substrate temperature of 315C, the results could be described by:

D(cm2/s) = 1.17 x 10-2exp[-1.53(eV)/kT]

A SIMS Analysis of Deuterium Diffusion in Hydrogenated Amorphous Silicon. D.E.Carlson, C.W.Magee: Applied Physics Letters, 1978, 33[1], 81-3