Experimental data, which revealed the essential features of atomic H that had been incorporated from various sources at low temperatures, were presented. Appropriate conditions for hydrogenation were chosen, and the H diffusivity (table 49) was found to be described by:

D(cm2/s) = 2 x 10-5exp[-0.49(eV)/kT]

The Peculiarities of Deep Level Defect Passivation in Si by Atomic Hydrogen. S.V.Koveshnikov, S.V.Nosenko, E.B.Yakimov: Physica Status Solidi A, 1990, 120[2], 391-5

 

Table 50

Diffusivity of D and H in Si

 

Diffusant

Temperature (K)

D (cm2/s)

D

270

3.7 x 10-12

D

265

2.2 x 10-12

D

260

1.6 x 10-12

D

255

1.2 x 10-12

D

250

6.6 x 10-13

D

245

4.7 x 10-13

D

240

1.9 x 10-13

D

235

1.8 x 10-13

D

230

8.2 x 10-14

D

225

5.4 x 10-14

H

270

7.6 x 10-12

H

265

5.7 x 10-12

H

260

2.7 x 10-12

H

255

1.9 x 10-12

H

245

6.0 x 10-13

H

240

3.7 x 10-13

H

235

2.8 x 10-13

H

230

1.2 x 10-13

H

220

4.0 x 10-14