The effect of heat treatment upon the minority carrier surface recombination velocity in H-passivated polycrystalline material was studied, at temperatures ranging from 350 to 500C, by using the electron beam induced current mode of a scanning electron microscope. The minority carrier trap centre densities, which were deduced from minority carrier surface recombination velocity data, varied from 8 x 1012 to 1.2 x 1012/cm2. A finite decrease in the minority carrier trap centre density indicated that H atoms diffused to the surface from the bulk of the hydrogenated samples. The activation energy for H diffusion in Si was found to be 0.53eV.

Effect of Heat Treatment on Redistribution of Hydrogen in Directionally Cast Polycrystalline Silicon. R.Kumar, R.K.Kotnala, N.K.Arora, B.K.Das: Applied Physics Letters, 1988, 52[20], 1670-1