The H diffusion process in B-doped material at 60 to 140C was entirely trap-limited and exhibited no dependence upon the diffusivity of the free H. The effective H diffusion coefficient was determined for B concentrations of 1.4 x 1015 and 3.8 x 1016/cm3. The diffusivity was governed by an activation energy of 1.28eV.

Trap-Limited Hydrogen Diffusion in Boron-Doped Silicon. T.Zundel, J.Weber: Physical Review B, 1992, 46, 2071