The motion of H in the B-H complex was studied. An applied stress was used to produce a preferential alignment of the B-H complex at temperatures which were sufficiently high (above about 60K) for the H to move within the complex. This alignment of the complexes was detected by comparing the optical absorption strengths of the H stretching vibrations for light which was polarized parallel to and perpendicular to the stress axis. From the kinetics of the decay of the alignment after the stress was removed, it was deduced that the motion of H from bond-centered site to bond-centered sites around the B atom was thermally activated with an activation energy of 0.19eV.

Hydrogen Motion in Defect Complexes: Reorientation Kinetics of the B-H Complex in Silicon. M.Stavola, K.Bergman, S.J.Pearton, J.Lopata: Physical Review Letters, 1988, 61[24], 2786-8

Table 52

Diffusivity of H in Si