Samples of (100)-oriented B-doped Czochralski material were diffused with H from a gel source, at temperatures of between 80 and 100C (table 52). The resultant profiles were determined by means of C-U measurements at 1MHz and fitted by a Gaussian function. At 100C, the diffusion coefficient agreed with the expression,

D(cm2/s) = 4.2 x 10-5exp[-0.56(eV)/kT]

which had been determined previously. The coefficient which was measured at 80C was an order of magnitude smaller.

K.Schmalz, K.Tittel-Helmrich: Physica Status Solidi A, 1989, 113[1], K9-13

Table 53

Diffusion of H in Si

Table 54

Diffusion of H in Si