The reactivation of passivated B acceptors in hydrogenated material was studied during zero-bias annealing at temperatures ranging from 65 to 130C (table 58). It was found that, for long annealing times and high annealing temperatures, the reactivation process exhibited second-order kinetics and was rate-limited by thermally activated H2 complex formation. At short annealing times and low annealing temperatures, the reactivation rate was larger than that due to H2 complex formation alone. It was concluded that the faster reactivation was caused by the diffusion of liberated H atoms into the bulk, as well as by H2 complex formation. The effective diffusion coefficient of H obeyed an Arrhenius relationship, with an activation energy of 1.41eV.

Reactivation Kinetics of Boron Acceptors in Hydrogenated Silicon during Zero Bias Anneal. A.Majumdar, S.Balasubramanian, V.Venkataraman, N.Balasubramanian: Journal of Applied Physics, 1997, 82[1], 192-5