Deuteration experiments were carried out on crystalline samples, and the resultant diffusion depth profiles were measured by means of secondary ion mass spectrometry. Careful analysis of the latter data (table 64) permitted a reduction to be made in the number of fitting parameters by excluding H molecule formation. It was found that the mobilities could be ranked in the increasing order: Ho - H- - H+. The dissociation energies of BH, AlH, and PH complexes were also calculated and permitted an estimation to be made of the corresponding bonding energies of the complexes. It was deduced that complexes could be ordered in terms of increasing stability: PH - BH - AlH.

Hydrogen Diffusion and Passivation Processes in p- and n-Type Crystalline Silicon. R.Rizk, P.De Mierry, D.Ballutaud, M.Aucouturier, D.Mathiot: Physical Review B, 1991, 44[12], 6141-51

Table 65

Diffusivity of H in Various Types of Si