A new type of experiment was described which offered additional opportunities for the isolation and measurement of the basic energetic and kinetic parameters which determined the behavior of interstitial H in semiconductors. The technique involved the release of monatomic H at a sharply defined time, and in a known spatial pattern, by exposing dopant-H complexes (in the depletion layer of a Schottky diode) to a pulse of minority carriers. Time-resolved measurements were then made of the capacitance transient that arose from H migration, charge-state changes, and complex re-formation. The new technique was demonstrated by measuring the diffusion coefficient of H species in Si (table 66). Useful constraints were presented which were related to the energies of the H donor and acceptor levels, and to rates of spontaneous charge changes among H+, Ho, and H-.

Diffusion of Negatively Charged Hydrogen in Silicon. N.M.Johnson, C.Herring: Physical Review B, 1992, 46[23], 15554-7