Depth profiles in heavily doped p-type material were obtained by analyzing the infra-red reflectance spectra of H-passivated samples. From these profiles, H diffusion coefficients were calculated for various temperatures (table 67) and dopant concentrations. The results were explained by assuming that H diffusion was limited by trapping at acceptor sites. A binding energy of 0.6eV was found for B-H complexes; in agreement with previous calculations.
Trap-Limited Hydrogen Diffusion in Doped Silicon. C.P.Herrero, M.Stutzmann, A.Breitschwerdt, P.V.Santos: Physical Review B, 1990, 41[2], 1054-8
Table 67
Diffusivity of H in Si Containing 1.5 x 1019/cm3 of B
Temperature (C) | D (cm2/s) |
210 | 7.6 x 10-12 |
180 | 3.3 x 10-12 |
150 | 1.5 x 10-12 |
120 | 3.0 x 10-13 |
90 | 3.2 x 10-14 |