Light-induced D tracer diffusion was measured in hydrogenated amorphous samples under conditions where thermal diffusion was negligible. Under high-intensity (9W/cm2) red-light soaking at 135C, the D diffusion coefficient was equal to 1.3 x 10-18cm2/s. An upper bound of 3 x 10-20cm2/s was put on the light-induced diffusion coefficient at 65C. Previous experiments had revealed light-enhanced diffusion only between 200 and 300C; a regime where thermal diffusion was also significant. The present 135C result extended the range of the 0.9eV activation energy for this diffusion. The 65C upper bound was consistent with an extrapolation of higher-temperature data.

Light-Induced D Diffusion Measurements in Hydrogenated Amorphous Silicon H.M.Branz, S.Asher, H.Gleskova, S.Wagner: Physical Review B, 1999, 59[8], 5513-20

Table 68

Diffusion of H in n-type Si