A quantitative study was made of the charge-state dependent local motion of H around C in Si by directly measuring the recovery of a stress-induced alignment of a H-C complex by means of deep-level transient spectroscopy under an uniaxial stress. It was found that H jumped (in the electron-empty charge state), from a bond-centered site between C and Si atoms to another one, as described by an activation energy of 1.33eV and a frequency factor of 7.1 x 1014/s. The H jumped much faster in the electron-occupied charge state, giving an activation energy of 0.55eV and a frequency factor of 3.3 x 106/s. It was concluded that the H-C complex captured an electron from the conduction band at its gap state with anti-bonding character, thus lowering the activation barrier and frequency factor for H motion in the electron-occupied charge state.

Electronically Controlled Motion of Hydrogen in Silicon. Y.Kamiura, K.Fukuda, Y.Yamashita, T.Ishiyama: Physical Review B, 2002, 65[11], 113205 (4pp)