Rapid thermal donor formation was achieved in plasma-hydrogenated p-type Czochralski material; resulting from the catalytic support of H. A simple method for the indirect determination of the diffusivity of H, by means of spreading resistance probe measurements, was presented. The H diffusion during plasma hydrogenation and post-hydrogenation annealing was investigated (figure 6). The impact of the duration of hydrogenation, annealing temperature and resistivity of the wafers upon H diffusion was considered. The diffusivity of H was determined at 270 to 450C. The activation energy for H diffusion was deduced to be 1.23eV, and the diffusion of H was interpreted within the framework of trap-limited diffusion mechanism, where O and H were found to be the main traps.

Hydrogen Diffusion at Moderate Temperatures in p-Type Czochralski Silicon. Y.L.Huang, Y.Ma, R.Job, A.G.Ulyashin: Journal of Applied Physics, 2004, 96[12], 7080-6

Figure 7

Diffusivity of H in Si

D (cm2/s) = 1.22 x 102 exp[-1.36(eV)/kT]