The H-enhanced thermal donor formation was studied in p-type Czochralski material after exposure to H plasma and post-hydrogenation annealing. The H diffusivities at between 350 and 450C were determined (figure 7) via spreading resistance probe measurements. The H diffusion was found to be trap-limited. Two relationships (for differing temperature ranges) were used to describe the lower boundary of the H concentration required to enhance O diffusion and thermal donor formation in Si. The result revealed that H atoms in both free and trapped states could enhance O diffusion.

The Lower Boundary of the Hydrogen Concentration Required for Enhancing Oxygen Diffusion and Thermal Donor Formation in Czochralski Silicon. Y.L.Huang, Y.Ma, R.Job, W.R.Fahrner, E.Simoen, C.Claeys: Journal of Applied Physics, 2005, 98[3], 033511 (4pp)