Defects created in Al0.4Ga0.6N crystals by 320keV Ar ion irradiation were studied using Rutherford back-scattering spectroscopy/channelling and transmission electron microscopy techniques. One of the main aims of the work was to use a revised version of McChasy, a Monte Carlo simulation code of back-scattering spectra, for the analysis of experimental results obtained for a dislocation-containing crystal. Transmission electron microscopy was used to get a better insight into dislocation and dislocation loop geometries in order to restrict the range of parameters used in simulations. Rutherford back-scattering spectroscopy/channelling analysis was performed in the 1.5 to 3MeV energy range to check whether Monte Carlo simulations correctly reproduced back-scattering spectra at various energies.

Defect Studies in Ion Irradiated AlGaN. J.Jagielski, L.Thomé, Y.Zhang, C.M.Wang, A.Turos, L.Nowicki, K.Pagowska, I.Jozwik: Nuclear Instruments and Methods in Physics Research B, 2010, 268[11-12], 2056-9