Al1− xInx N epilayers, with an In content of 7 to 20%, were grown onto GaN templates via metalorganic chemical vapour deposition. X-ray diffraction indicated that all of the Al1− xInx N epilayers contained a relatively low density of threading dislocations. Rutherford back-scattering/channelling measurements provided exact compositional information, and showed that a gradual variation in the composition of the Al1− xInx N epilayer occurred along the growth direction. Experimental optical reflection results clearly indicated the band-gap energies of the Al1− xInx N epilayers. A bowing parameter of 6.5eV was obtained from the compositional dependence of the energy gap. The cathodoluminescence peak energy of the Al1− xInx N epilayer was much lower than its band-gap; indicating a relatively large Stokes shift.

Structural and Optical Properties of Al1−xInxN Epilayers on GaN Template Grown by Metalorganic Chemical Vapor Deposition. G.J.Lu, J.J.Zhu, D.S.Jiang, Y.T.Wang, D.G.Zhao, Z.S.Liu, S.M.Zhang, H.Yang: Chinese Physics B, 2010, 19[2], 026804