The forward current–voltage–temperature characteristics of (Ni/Au)–Al0.83In0.17N/AlN/GaN heterostructures were studied at 80 to 375K. The temperature dependences of the tunnelling saturation current and the tunnelling parameters were obtained. A weak temperature-dependence of the saturation current, and the absence of a temperature-dependence of the tunnelling parameters, were observed. The results indicated that, at 80 to 375K, the mechanism of charge transport in the (Ni/Au)–Al0.83In0.17N/AlN/GaN heterostructure was tunnelling among dislocations intersecting the space-charge region. A model was proposed for non-uniform tunnelling along dislocations that intersected the space-charge region.

Tunneling Current via Dislocations in Schottky Diodes on AlInN/AlN/GaN Heterostructures. E.Arslan, Ş.Altındal, S.Özçelik, E.Ozbay: Semiconductor Science and Technology, 2009, 24[7], 075003