The diffusion of indium in In/nCdS/glass and In/nCdS/pSi structures at 350 to 550C in a vacuum of 1.33 x 10−1Pa was investigated. Indium-doped and undoped CdS films were characterized using X-ray diffraction and electrical and optical measurements. The concentration profiles of indium, and the components of CdS films (Cd and S) in In/nCdS/pSi structures, were studied using energy dispersive X-ray fluorescence analysis. Thermal annealing of In/nCdS/pSi structures was accompanied by the diffusive penetration of In through the CdS film, into the Si substrate. At the same time, Cd and S atoms from CdS film diffused into the Si substrate. The diffusion-doping of CdS film with indium did not change the polycrystalline hexagonal structure or the energy band-gap of CdS films, and increased the electron concentration from 1.4 x 1013 to 1.3 x 1016/cm3.

Effect of Indium Diffusion on Characteristics of CdS Films and nCdS/pSi Heterojunctions. T.D.Dzhafarov, F.Ongul, S.A.Yuksel: Vacuum, 2009, 84[2], 310-4