The effect of uniaxial plastic deformation, indentation, and scribing along the selected axes on the excitonic and deep level photoluminescence of CdS, CdSe, CdTe, and ternary CdSeTe compounds was studied. Dislocations movement produces new near band-gap narrow photoluminescence lines, and changes initial wide photoluminescence bands (the deep level emission), in particular, a relative intensity increase or appearing of the near-midgap 0.8, 1.1 and 1.45eV bands in CdTe, and corresponding photoluminescence bands in other II-VI compounds (CdS, CdSe, and CdSeTe)

Point and Nanoscale Defects in Cd(S, Se, Te) Crystals Induced by Plastic Deformation. V.Babentsov, V.Boiko, R.Grill, J.Franc, G.A.Shepelskii: Physica Status Solidi C, 2010, 7[6], 1492-4