High-temperature in situ galvanomagnetic measurements were made of chlorine-doped CdTe, [Cl] ~ 4 x 1018/cm3 at 600 to 700C, near to Cd saturation. The chemical diffusion coefficient was deduced from the relaxation of the electrical conductivity following a step-like change in the ambient Cd pressure (PCd) and could be well approximated by:

D(cm2/s) = 1.5 x 107exp[-2.55(eV)/kT]/√PCd(atm)

Chemical Diffusion in CdTe:Cl. R.Grill, B.Nahlovskyy, E.Belas, M.Bugár, P.Moravec, P.Höschl: Semiconductor Science and Technology, 2010, 25[4], 045019