The diffusion of the impurities Cu, Ag, Au and Na in CdTe and CdZnTe exhibited the unusual phenomenon of up-hill diffusion if the diffusion of the impurity was performed under external Cd pressure at temperatures typically in the range 700-900K. A model was proposed that described these concentration profiles quantitatively and yields pre-requisites for the observation of uphill diffusion. If a metal layer was evaporated onto the implanted surface, the diffusion of the impurity was strongly affected by the generation of intrinsic defects at the metal-semiconductor interface.

Prerequisites for the Formation of Unusual Diffusion Profiles in II-VI Semiconductors. H.Wolf, J.Kronenberg, F.Wagner, T.Wichert, Isolde: Physica Status Solidi B, 2010, 247[6], 1405-8