Calculations of the concentrations of free charge carriers and point defects in monocrystals were carried out at the boundary of the region of existence of the compound. The type of predominant point defect governing the electrical properties of material with an excess of cadmium was identified. The maximum annealing temperatures and partial vapour pressures for two-temperature annealing which yielded a material with electron conductivity were deduced.

Proper Point Defects in Cadmium Telluride with Excess of Cadmium. V.V.Prokopiv, I.V.Gorichok, U.M.Pisklinets: Inorganic Materials, 2009, 45[10], 1097