The first results demonstrating the existence of a donor level of interstitial hydrogen in CdTe were presented. From the Arrhenius analysis, this donor level was characterized by an activation energy for electron emission EC−Et = 0.06eV and a pre-exponential factor equal to 2 x 105/s K2, and was observed after a low-temperature implantation with protons. Above 75K, the hydrogen-deep donor state was unstable converting to a more stable configuration which was believed to be a negatively charged form of isolated H. The results were analogous to those observed for interstitial hydrogen in GaAs

Donor Level of Interstitial Hydrogen in CdTe. V.Kolkovsky, V.Kolkovsky, K.Bonde Nielsen, L.Dobaczewski, G.Karczewski, A.Nylandsted Larsen: Physical Review B, 2009, 80[16], 165205