It was recalled that the Cd vacancy (VCd) and the Te antisite (TeCd) were two predominant defects in CdTe and CdZnTe alloys grown under Te-rich conditions. The properties of these two intrinsic defects in Cd1-xZnxTe alloys with x<0.5 were examined using first-principles calculations. It was shown that Cd vacancies became progressively more favourable with increasing Zn content, in contrast to Te anti-sites, which exhibited the opposite behaviour; explaining the trend towards p-type conductivity in Cd1-xZnxTe.

Intrinsic Defects in CdTe and CdZnTe Alloys. A.Carvalho, A.Tagantsev, S.Öberg, P.R.Briddon, N.Setter: Physica B, 2009, 404[23-24], 5019-21