It was noted that the high dislocation density (2 x 107/cm2 for a thickness of 7μm) in CdTe(211)B on Ge(211) was a barrier to the technological exploitation of this material. A systematic study was made of in situ and post-growth annealing cycles aimed at reducing it. An etch pit density of 2 x 106/cm2 was achieved by optimizing the growth conditions and annealing the samples in situ. This finding was corroborated by high-resolution X-ray diffraction, atomic force microscopy, photoluminescence and ellipsometry measurements.

Reduction of the Dislocation Density in Molecular Beam Epitaxial CdTe(211)B on Ge(211). G.Badano, I.C.Robin, B.Amstatt, F.Gemain, X.Baudry: Journal of Crystal Growth, 2010, 312[10], 1721-5