A unit for Cd1- xZnxTe growth via the axial heat-flux close to the phase-interface method, at Ar over-pressures of up to 12MPa, was designed. The influence was investigated of melt-superheating, growth-rate, melt-layer thickness, argon pressure and growth mode upon the Zn distribution in 21mm to 45mm diameter crystals and upon defect formation in Cd1- xZnxTe ingots. The results demonstrated that the axial heat-flux close to the phase-interface method permitted effective control of the shape of the solid/liquid interface and ensures a low fluid velocity and high radial compositional homogeneity. The feeding method used markedly improved the axial Zn profile and ensured a low (5 x 103/cm2) dislocation density in the grown crystal.

Effect of Growth Conditions on the Compositional Homogeneity of Cd1-xZnxTe Crystals. M.A.Gonik, M.M.Gonik, A.S.Tomson: Inorganic Materials, 2009, 45[10], 1103