Semi-insulating Cd0.9Zn0.1Te:Pb crystals were grown by the vertical Bridgman method. Measurements of the current deep-level transient spectroscopy revealed three trap levels in this material. Unlike other compensating dopants, CdZnTe:Pb samples did not show any Cd-vacancies defects and A-center levels. They were subjected to temperature-gradient annealing, under a Cd over-pressure, at 490 to 717C, and an exponential relationship was found between the annihilation time of Te precipitates and the annealing temperature. The energy resolution of an annealed CdZnTe:Pb detector, tested using a 137Cs radioactive source, gave an energy resolution of 2.5%.

Defect Levels and Thermomigration of Te Precipitates in CdZnTe:Pb. K.H.Kim, R.Gul, V.Carcelén, A.E.Bolotnikov, G.S.Carmarda, G.Yang, A.Hossain, Y.Cui, R.B.James, J.Hong, S.U.Kim: Journal of Crystal Growth, 2010, 312[6], 781-4