The properties of deep levels created by proton irradiation in Be-doped Al0.5Ga0.5As MBE layers were investigated using deep-level transient spectroscopy. The samples were irradiated by H+ ions of an energy equal to 200keV and a fluence of 3 x 1011/cm2. Deep-level transient spectroscopy revealed 5 hole traps in the irradiated samples. Proton irradiation increased the concentration of one of the hole traps present in the as-grown p-type Al0.5Ga0.5As samples and produces three new acceptor-like traps. The concentration of the trap related to the level EV+0.14eV remained unchanged during proton irradiation

Deep Level Defects in Proton Irradiated p-Type Al0.5Ga0.5As. J.Szatkowski, K.Sierański, E.Płaczek-Popko, Z.Gumienny: Physica B, 2009, 404[23-24], 4967-9