The diffusion of ion-implanted Mn in semi-insulating and liquid-encapsulated Czochralski-grown GaAs was determined using a modified radiotracer technique. The effect of the growth technique and conditions upon Mn diffusion in low-temperature molecular beam epitaxially grown GaAs was also studied. Two distinct diffusion components appeared for ion-implanted Mn diffusion in GaAs: slow and fast. As the diffusivity for the semi-insulating material was slightly higher than that for the low-temperature-grown material, it was observed that the diffusivity of the fast component slowed with increasing initial concentrations of Ga sub-lattice defects. At the same time, the Mn concentration in the tail part of the diffusion profile was higher in the low-temperature-grown material. The Ga vacancy-assisted clustering of Mn was proposed to be a likely reason for the observed effects.

The Effect of a Material Growth Technique on Ion-Implanted Mn Diffusion in GaAs. O.Koskelo, J.Räisänen, F.Tuomisto, J.Sadowski, Isolde: Semiconductor Science and Technology, 2009, 24[4],045011