The interplay between compressive strains and defects within the active region of 980nm emitting high-power diode laser arrays was reported. By analyzing photocurrent data, it was shown how external mechanical loads caused by device packaging resulted in cumulative defect signatures within their active region. Furthermore, the reverse situation was analyzed where device degradation results in the generation of defect signatures and these defects subsequently acted as a driving force for the creation of compressive strains within the quantum well active region of the devices.

Gradual Degradation of GaAs-Based Quantum Well Lasers, Creation of Defects, and Generation of Compressive Strain. J.W.Tomm, M.Ziegler, M.Oudart, J.Nagle, J.Jiménez: Physica Status Solidi A, 2009, 206[8], 1912-5