The selective-area growth of vertically aligned GaAs nanowires on Si(111) substrates was studied. Modification of the initial Si(111) surface by pre-treatment in an AsH3 atmosphere, and low-temperature growth of GaAs, were important for controlling the growth orientation of the GaAs nanowires on the Si(111) surface. It was also found that the size of the openings strongly affected the growth morphology of the GaAs nanowires on Si(111). Small-diameter openings reduced the antiphase defects and improved the optical properties of the GaAs nanowires. Coherent growth without misfit dislocations at the GaAs/Si interface was possible.

Selective-Area Growth of Vertically Aligned GaAs and GaAs/AlGaAs Core–Shell Nanowires on Si(111) Substrate. K.Tomioka, Y.Kobayashi, J.Motohisa, S.Hara, T.Fukui: Nanotechnology, 2009, 20[14], 145302