The dependence of cracking at Vickers indentations in (100) GaAs was investigated for different dopings by electron microscopy. Depending on the load, the formation of cracks was studied. In semi-insulating carbon-doped GaAs, a clear anisotropy in the cracking pattern exists with cracks running preferentially along the ± [011] directions. In contrast, in n-type as well as in p-type GaAs little or no anisotropic crack pattern could be recognized. The formation and propagation of cracks does not correlate with the formation of the dislocation rosette.

Anisotropy of Crack and Dislocation Formation in GaAs. I.Ratschinski, F.Heyroth, W.Fränzel, H.S.Leipner: Physica Status Solidi C, 2009, 6[8], 1836-40